Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions, Biosens Bioelectron, 15 Mar 2024

发布时间:2024-03-15

Biosensors & Bioelectronics, 15 March, 2024, DOI:https://doi.org/10.1016/j.bios.2024.116171

Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

Chenyang Yang, Jianwen Sun, Yulong Zhang, Jingya Tang, Zizheng Liu, Teng Zhan, Dian-Bing Wang, Guoqi Zhang, Zewen Liu, Xian-En Zhang

Abstract

The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect SARS-CoV-2 spike proteins at an impressively low concentration of 10-22 M. The sensor was also applied to pseudoviruses and SARS-CoV-2 ΔN virions that display the Spike proteins with a single virion particle sensitivity. These features validate the potential of AlGaN/GaN HEMT biosensors for point of care tests targeting SARS-CoV-2. This research not only provides the first HEMT biosensing platform for ultrasensitive and label-free detection of SARS-CoV-2.

文章链接:https://www.sciencedirect.com/science/article/pii/S0956566324001763?via%3Dihub



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